P-channel power MOSFET with 50A continuous drain current and -40V drain-source voltage. Features low 9.4mΩ drain-source on-resistance and 136W maximum power dissipation. Operates from -55°C to 175°C, packaged in a TO-252-3 surface mount or through-hole configuration. RoHS compliant with a 10ns turn-on delay and 140ns fall time.
PackageTO-252-3
MountingThrough Hole, Surface Mount
PolarityP-CHANNEL
Power3W
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Technical Specifications
Vishay SUD50P04-09L-E3 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
50A
Drain to Source Resistance
9.4mR
Drain to Source Voltage (Vdss)
-40V
Drain-source On Resistance-Max
9.4mR
Fall Time
140ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
4.8nF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
136W
Mount
Through Hole, Surface Mount
Nominal Vgs
-1V
Number of Channels
1
Number of Elements
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
3W
Radiation Hardening
No
Rds On Max
9.4mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1V
Turn-Off Delay Time
145ns
Turn-On Delay Time
10ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUD50P04-09L-E3 Datasheet
Download the complete datasheet for Vishay SUD50P04-09L-E3 to view detailed technical specifications.
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