
N-channel Power MOSFET featuring low on-resistance and high switching speed. Designed for efficient power management applications, this device offers excellent thermal performance and robust reliability. Its advanced trench technology ensures superior conductivity and reduced power loss, making it ideal for high-frequency switching circuits and power supply designs.
Vishay SUG90090E-GE3 technical specifications.
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
Download the complete datasheet for Vishay SUG90090E-GE3 to view detailed technical specifications.
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