N-Channel Power MOSFET, TO-263-3 package, featuring 30V drain-source breakdown voltage and 110A continuous drain current. Offers low 4.2mΩ Rds On resistance for efficient power handling. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 120W. Surface mountable with fast switching characteristics, including 12ns turn-on and 10ns fall times.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
Power3.75W
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Technical Specifications
Vishay SUM110N03-04P-E3 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 110A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 4.2mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.1nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 120W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.75W |
| Radiation Hardening | No |
| Rds On Max | 4.2mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SUM110N03-04P-E3 Datasheet
Download the complete datasheet for Vishay SUM110N03-04P-E3 to view detailed technical specifications.
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