N-Channel Power MOSFET, TO-263-3 package, featuring 30V drain-source breakdown voltage and 110A continuous drain current. Offers low 4.2mΩ Rds On resistance for efficient power handling. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 120W. Surface mountable with fast switching characteristics, including 12ns turn-on and 10ns fall times.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
Power3.75W
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Technical Specifications
Vishay SUM110N03-04P-E3 technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
110A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
4.2mR
Drain to Source Voltage (Vdss)
30V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
5.1nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
120W
Mount
Surface Mount
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.75W
Radiation Hardening
No
Rds On Max
4.2mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1V
Turn-Off Delay Time
40ns
Turn-On Delay Time
12ns
Compliance
RoHS
Compliant
Datasheet
Vishay SUM110N03-04P-E3 Datasheet
Download the complete datasheet for Vishay SUM110N03-04P-E3 to view detailed technical specifications.
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