Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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Vishay SUM110N10-09 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 110A |
| Drain to Source Resistance | 9.5mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 130ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Length | 10.41mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.75W |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 438W |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Series | SUM |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
| RoHS | Not Compliant |
