N-channel power MOSFET with 100V drain-source voltage and 110A continuous drain current. Features a low 9.5mΩ drain-source on-resistance and 437.5W maximum power dissipation. Designed for surface mounting in a TO-263 package, this RoHS compliant component offers fast switching speeds with turn-on delay of 20ns and fall time of 130ns. Operating temperature range from -55°C to 175°C.
PackageTO-263
MountingSurface Mount
PolarityN-CHANNEL
Power3.75W
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Technical Specifications
Vishay SUM110N10-09-E3 technical specifications.
General
Package/Case
TO-263
Continuous Drain Current (ID)
110A
Drain to Source Resistance
9.5mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
9.5MR
Dual Supply Voltage
100V
Fall Time
130ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
6.7nF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
437.5W
Mount
Surface Mount
Nominal Vgs
4V
Number of Channels
1
Number of Elements
1
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.75W
Radiation Hardening
No
Rds On Max
9.5mR
Reach SVHC Compliant
Unknown
Reverse Recovery Time
70ns
RoHS Compliant
Yes
Series
TrenchFET®
Termination
SMD/SMT
Threshold Voltage
4V
Turn-Off Delay Time
55ns
Turn-On Delay Time
20ns
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUM110N10-09-E3 Datasheet
Download the complete datasheet for Vishay SUM110N10-09-E3 to view detailed technical specifications.
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