P-channel power MOSFET featuring 40V drain-source voltage and 110A continuous drain current. Offers a low 4.2mΩ drain-source on-resistance. Designed for high-power applications with a maximum power dissipation of 375W and an operating temperature range of -55°C to 175°C. Packaged in a TO-263-3 surface mount package, this RoHS compliant component is suitable for general-purpose power applications.
PackageTO-263-3
MountingThrough Hole, Surface Mount
PolarityP-CHANNEL
Power375W
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Technical Specifications
Vishay SUM110P04-04L-E3 technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
110A
Drain to Source Resistance
4.2mR
Drain to Source Voltage (Vdss)
40V
Drain-source On Resistance-Max
4.2MR
Fall Time
110ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
11.2nF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
375W
Mount
Through Hole, Surface Mount
Number of Channels
1
Package Quantity
800
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
375W
Radiation Hardening
No
Rds On Max
4.2mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
190ns
Turn-On Delay Time
25ns
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUM110P04-04L-E3 Datasheet
Download the complete datasheet for Vishay SUM110P04-04L-E3 to view detailed technical specifications.
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