P-channel power MOSFET featuring 40V drain-source voltage and 110A continuous drain current. Offers a low 4.2mΩ drain-source on-resistance. Designed for high-power applications with a maximum power dissipation of 375W and an operating temperature range of -55°C to 175°C. Packaged in a TO-263-3 surface mount package, this RoHS compliant component is suitable for general-purpose power applications.
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| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 110A |
| Drain to Source Resistance | 4.2mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 4.2MR |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 11.2nF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 375W |
| Mount | Through Hole, Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 375W |
| Radiation Hardening | No |
| Rds On Max | 4.2mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 190ns |
| Turn-On Delay Time | 25ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
| RoHS | Compliant |
