P-channel power MOSFET featuring a 40V drain-source voltage and 5mΩ drain-source on-resistance. This surface-mount component offers a continuous drain current of 39A and a maximum power dissipation of 375W. Operating across a wide temperature range of -55°C to 175°C, it boasts fast switching characteristics with turn-on delay times of 25ns and fall times of 35ns. The TO-263 package ensures efficient thermal management for demanding power applications.
PackageTO-263
MountingSurface Mount
PolarityP-CHANNEL
Power15W
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Technical Specifications
Vishay SUM110P04-05-E3 technical specifications.
General
Package/Case
TO-263
Continuous Drain Current (ID)
39A
Drain to Source Resistance
5mR
Drain to Source Voltage (Vdss)
-40V
Drain-source On Resistance-Max
4.2mR
Fall Time
35ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
11.3nF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
375W
Mount
Surface Mount
Nominal Vgs
-3V
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
15W
Radiation Hardening
No
Rds On Max
5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-3V
Turn-Off Delay Time
110ns
Turn-On Delay Time
25ns
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUM110P04-05-E3 Datasheet
Download the complete datasheet for Vishay SUM110P04-05-E3 to view detailed technical specifications.
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