P-channel power MOSFET with 60V drain-source voltage and 110A continuous drain current. Features low 6.9mΩ drain-source on-resistance and 3.75W power dissipation. Surface mount TO-263 package with a 240ns fall time and 20ns turn-on delay. Operates from -55°C to 175°C.
PackageTO-263
MountingSurface Mount
PolarityP-CHANNEL
Power3.75W
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Technical Specifications
Vishay SUM110P06-07L-E3 technical specifications.
General
Package/Case
TO-263
Continuous Drain Current (ID)
110A
Drain to Source Resistance
6.9mR
Drain to Source Voltage (Vdss)
-60V
Drain-source On Resistance-Max
6.9MR
Fall Time
240ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
11.4nF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.75W
Mount
Surface Mount
Nominal Vgs
-3V
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
3.75W
Radiation Hardening
No
Rds On Max
6.9mR
Reach SVHC Compliant
Unknown
Series
TrenchFET®
Threshold Voltage
-3V
Turn-Off Delay Time
200ns
Turn-On Delay Time
20ns
Weight
0.068654oz
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUM110P06-07L-E3 Datasheet
Download the complete datasheet for Vishay SUM110P06-07L-E3 to view detailed technical specifications.
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