N-channel power MOSFET featuring 100V drain-source voltage and 40A continuous drain current. Offers low 30mΩ drain-source on-resistance. Designed for surface mount applications in a TO-263 package, with a maximum power dissipation of 3.75W and an operating temperature range of -55°C to 175°C. Includes fast switching characteristics with typical turn-on delay of 11ns and fall time of 12ns.
PackageTO-263
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay SUM40N10-30-E3 technical specifications.
General
Package/Case
TO-263
Continuous Drain Current (ID)
40A
Drain to Source Resistance
30mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
30mR
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
2.4nF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.75W
Mount
Surface Mount
Nominal Vgs
4V
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
30mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
30ns
Turn-On Delay Time
11ns
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUM40N10-30-E3 Datasheet
Download the complete datasheet for Vishay SUM40N10-30-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
