N-channel power MOSFET featuring 100V drain-source voltage and 40A continuous drain current. Offers low 30mΩ drain-source on-resistance. Designed for surface mount applications in a TO-263 package, with a maximum power dissipation of 3.75W and an operating temperature range of -55°C to 175°C. Includes fast switching characteristics with typical turn-on delay of 11ns and fall time of 12ns.
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Vishay SUM40N10-30-E3 technical specifications.
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Resistance | 30mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 30mR |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 2.4nF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.75W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 30mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 11ns |
| Width | 9.65mm |
| RoHS | Compliant |
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