P-channel MOSFET with 60V drain-source voltage and 55A continuous drain current. Features low 19mΩ drain-source on-resistance and 125W maximum power dissipation. Designed for surface mounting in a TO-263 package, this component offers fast switching with turn-on delay of 12ns and fall time of 230ns. Operates across a wide temperature range from -55°C to 175°C.
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| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 55A |
| Drain to Source Resistance | 19mR |
| Drain to Source Voltage (Vdss) | -60V |
| Drain-source On Resistance-Max | 19mR |
| Fall Time | 230ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 3.5nF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.75W |
| Rds On Max | 19mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
| RoHS | Compliant |
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