N-channel MOSFET with 200V drain-source voltage (Vdss) and 36A continuous drain current (ID). Features low 53mΩ drain-to-source resistance (Rds On Max) and a TO-220-3 through-hole package. Operates with a gate-source voltage (Vgs) up to 25V, exhibiting fast switching speeds with a 9ns fall time and 16ns turn-on delay. Offers a maximum power dissipation of 166W and a wide operating temperature range from -55°C to 175°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay SUP36N20-54P-E3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
36A
Drain to Source Resistance
53mR
Drain to Source Voltage (Vdss)
200V
Dual Supply Voltage
200V
Fall Time
9ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
3.1nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
166W
Mount
Through Hole
Nominal Vgs
4.5V
Package Quantity
50
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
53mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Termination
Through Hole
Threshold Voltage
4.5V
Turn-Off Delay Time
27ns
Turn-On Delay Time
16ns
Compliance
RoHS
Compliant
Datasheet
Vishay SUP36N20-54P-E3 Datasheet
Download the complete datasheet for Vishay SUP36N20-54P-E3 to view detailed technical specifications.
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