P-channel MOSFET with a -60V drain-source voltage and 53A continuous drain current. Features low 19.5mΩ drain-source on-resistance and 20V gate-source voltage. Packaged in a TO-220AB through-hole mount, this device offers 104.2W power dissipation and operates from -55°C to 150°C. Includes fast switching times with 10ns turn-on and 70ns turn-off delays.
PackageTO-220AB
MountingThrough Hole
PolarityP-CHANNEL
Power104.2W
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Technical Specifications
Vishay SUP53P06-20-E3 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
53A
Drain to Source Resistance
19.5mR
Drain to Source Voltage (Vdss)
-60V
Drain-source On Resistance-Max
19.5MR
Fall Time
40ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
3.5nF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
104.2W
Radiation Hardening
No
Rds On Max
19.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1V
Turn-Off Delay Time
70ns
Turn-On Delay Time
10ns
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUP53P06-20-E3 Datasheet
Download the complete datasheet for Vishay SUP53P06-20-E3 to view detailed technical specifications.
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