N-channel MOSFET with 60V drain-source voltage (Vdss) and 60A continuous drain current (ID). Features low 12mR drain-to-source resistance (Rds On Max) and 100W power dissipation. Packaged in a TO-220-3 through-hole mount with a maximum operating temperature of 150°C. Offers fast switching characteristics with turn-on delay time of 11ns and fall time of 8ns. RoHS compliant.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power100W
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Technical Specifications
Vishay SUP60N06-12P-E3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
60A
Drain to Source Resistance
12mR
Drain to Source Voltage (Vdss)
60V
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
1.97nF
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
100W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
100W
Radiation Hardening
No
Rds On Max
12mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
16ns
Turn-On Delay Time
11ns
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUP60N06-12P-E3 Datasheet
Download the complete datasheet for Vishay SUP60N06-12P-E3 to view detailed technical specifications.
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