N-channel MOSFET with 60V drain-source voltage and 60A continuous drain current. Features low 12mR drain-source on-resistance and 100W maximum power dissipation. Packaged in a TO-220AB through-hole mount, this component offers fast switching with typical turn-on delay of 11ns and fall time of 8ns. Operating temperature range from -55°C to 150°C, it is RoHS compliant and lead-free.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power3.25W
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Technical Specifications
Vishay SUP60N06-12P-GE3 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
60A
Drain to Source Resistance
12mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
12mR
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
1.97nF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
100W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
50
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.25W
Radiation Hardening
No
Rds On Max
12mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
16ns
Turn-On Delay Time
11ns
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUP60N06-12P-GE3 Datasheet
Download the complete datasheet for Vishay SUP60N06-12P-GE3 to view detailed technical specifications.
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