P-channel Power MOSFET with 40V drain-source breakdown voltage and 65A continuous drain current. Features low 15mΩ drain-source on-resistance and 120W maximum power dissipation. Operates across a wide temperature range from -55°C to 175°C. Packaged in a TO-220AB through-hole mount with a 3-pin configuration. RoHS compliant and lead-free.
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Vishay SUP65P04-15-E3 technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 65A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 15mR |
| Drain to Source Voltage (Vdss) | -40V |
| Fall Time | 140ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 120W |
| Mount | Through Hole |
| Nominal Vgs | -3V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.75W |
| Radiation Hardening | No |
| Rds On Max | 15mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 15ns |
| RoHS | Compliant |
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