N-Channel Power MOSFET featuring 60V drain-source breakdown voltage and a low 14mΩ drain-source on-resistance. This Metal-oxide Semiconductor FET offers a continuous drain current of 70A and a maximum power dissipation of 142W. Designed for demanding applications, it operates across a wide temperature range from -55°C to 175°C. The TO-220-3 package facilitates efficient heat management, with fast switching characteristics including 13ns turn-on delay and 11ns fall time.
Vishay SUP70N06-14-E3 technical specifications.
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