N-channel power MOSFET featuring 30V drain-source breakdown voltage and 85A continuous drain current. Offers a low 4.3mΩ maximum drain-source on-resistance. Operates within a -55°C to 175°C temperature range with 166W maximum power dissipation. Through-hole mounting in a TO-220-3 package. Includes fast switching characteristics with turn-on delay time of 15ns and fall time of 22ns.
Vishay SUP85N03-04P-E3 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 85A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 4.3mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 4.3mR |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.61inch |
| Input Capacitance | 4.5nF |
| Lead Free | Lead Free |
| Length | 0.413inch |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 166W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 166W |
| Radiation Hardening | No |
| Rds On Max | 4.3mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 15ns |
| Width | 0.183inch |
| RoHS | Compliant |
No datasheet is available for this part.
