
N-channel MOSFET with 150V drain-source voltage and 85A continuous drain current. Features low 21mΩ drain-source resistance and 300W power dissipation. Packaged in a TO-220AB through-hole mount with a 175°C maximum operating temperature. Includes fast switching times with turn-on delay at 22ns and fall time at 170ns.
Vishay SUP85N15-21-E3 technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 85A |
| Drain to Source Resistance | 21mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 170ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 4.75nF |
| Length | 10.41mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.4W |
| Mount | Through Hole |
| Nominal Vgs | 2V |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 21mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 22ns |
| DC Rated Voltage | 150V |
| Weight | 0.211644oz |
| Width | 4.7mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SUP85N15-21-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
