N-channel power MOSFET, TO-220-3 package, featuring 75V drain-source breakdown voltage and 90A continuous drain current. Offers a maximum drain-source on-resistance of 8.2mΩ at a gate-source voltage of 10V. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 3.75W. Includes fast switching characteristics with turn-on delay time of 21ns and fall time of 10ns. RoHS compliant and lead-free.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power3.75W
Quick Jump:
Technical Specifications
Vishay SUP90N08-8M2P-E3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
90A
Drain to Source Breakdown Voltage
75V
Drain to Source Resistance
6.9mR
Drain to Source Voltage (Vdss)
75V
Drain-source On Resistance-Max
8.2mR
Dual Supply Voltage
75V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
0.61inch
Input Capacitance
3.528nF
Lead Free
Lead Free
Length
0.413inch
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.75W
Mount
Through Hole
Package Quantity
500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.75W
Radiation Hardening
No
Rds On Max
8.2mR
RoHS Compliant
Yes
Series
TrenchFET®
Termination
Through Hole
Turn-Off Delay Time
32ns
Turn-On Delay Time
21ns
Width
0.183inch
Compliance
RoHS
Compliant
Datasheet
Vishay SUP90N08-8M2P-E3 Datasheet
Download the complete datasheet for Vishay SUP90N08-8M2P-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
