N-channel power MOSFET, TO-220-3 package, featuring 75V drain-source breakdown voltage and 90A continuous drain current. Offers a maximum drain-source on-resistance of 8.2mΩ at a gate-source voltage of 10V. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 3.75W. Includes fast switching characteristics with turn-on delay time of 21ns and fall time of 10ns. RoHS compliant and lead-free.
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Vishay SUP90N08-8M2P-E3 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 6.9mR |
| Drain to Source Voltage (Vdss) | 75V |
| Drain-source On Resistance-Max | 8.2mR |
| Dual Supply Voltage | 75V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.61inch |
| Input Capacitance | 3.528nF |
| Lead Free | Lead Free |
| Length | 0.413inch |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.75W |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.75W |
| Radiation Hardening | No |
| Rds On Max | 8.2mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Termination | Through Hole |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 21ns |
| Width | 0.183inch |
| RoHS | Compliant |
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