Reflective phototransistor with a 4mm sensing distance, featuring a 32V collector-emitter breakdown voltage and 50mA forward current. This through-hole mounted component offers a 950nm wavelength and operates within a -40°C to 85°C temperature range. It includes a phototransistor output type and is RoHS compliant.
MountingThrough Hole
Power200mW
Quick Jump:
Technical Specifications
Vishay TCRT1010 technical specifications.
General
Collector Emitter Breakdown Voltage
32V
Collector Emitter Voltage (VCEO)
32V
Collector-emitter Voltage-Max
32V
Contact Plating
Tin, Silver
Forward Current
50mA
Height
4mm
Input Current
50mA
Lead Free
Lead Free
Length
7mm
Max Collector Current
50mA
Max Operating Temperature
85°C
Min Operating Temperature
-40°C
Mount
Through Hole
Number of Channels
2
Number of Elements
1
Output Type
Phototransistor
Output Voltage
32V
Package Quantity
1000
Packaging
Bulk
Power Dissipation
200mW
Reach SVHC Compliant
No
Reverse Breakdown Voltage
5V
Reverse Voltage
5V
Reverse Voltage (DC)
5V
RoHS Compliant
Yes
Sensing Distance
4mm
DC Rated Voltage
32V
Wavelength
950nm
Width
2.5mm
Compliance
RoHS
Compliant
Datasheet
Vishay TCRT1010 Datasheet
Download the complete datasheet for Vishay TCRT1010 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.