NPN phototransistor with a 925nm wavelength, designed for through-hole mounting in a T-1 package. Features a 70V collector-emitter breakdown voltage and a maximum collector current of 50mA. This silicon optical sensor offers a 2.3µs fall time and operates within a temperature range of -40°C to 100°C, with a maximum power dissipation of 100mW. The domed lens provides a 30° viewing angle.
PackageT
MountingThrough Hole
PolarityNPN
Power100mW
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Technical Specifications
Vishay TEFT4300 technical specifications.
General
Package/Case
T
Collector Emitter Breakdown Voltage
70V
Collector Emitter Saturation Voltage
300mV
Collector Emitter Voltage (VCEO)
70V
Collector-emitter Voltage-Max
70V
Fall Time
2.3us
Height
4.5mm
Lead Free
Lead Free
Length
3.2mm
Lens Style
Domed
Max Collector Current
50mA
Max Operating Temperature
100°C
Min Operating Temperature
-40°C
Max Power Dissipation
100mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Orientation
Top View
Package Quantity
5000
Packaging
Bulk
Polarity
NPN
Power Consumption
100mW
Power Dissipation
100mW
Radiation Hardening
No
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Viewing Angle
30°
Wavelength
925nm
Width
3.9mm
Compliance
RoHS
Compliant
Datasheet
Vishay TEFT4300 Datasheet
Download the complete datasheet for Vishay TEFT4300 to view detailed technical specifications.
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