NPN phototransistor with a 920nm wavelength, featuring a 70V collector-emitter breakdown voltage and 100mA maximum collector current. This silicon chip offers a 300mV collector-emitter saturation voltage and a 8µs fall time. Housed in a radial, through-hole mount package with a domed lens, it operates within a -40°C to 85°C temperature range and has a 150mW power dissipation.
PackageRadial
MountingThrough Hole
PolarityNPN
Power150mW
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Technical Specifications
Vishay TEKT5400S technical specifications.
General
Package/Case
Radial
Collector Emitter Breakdown Voltage
70V
Collector Emitter Saturation Voltage
300mV
Collector Emitter Voltage (VCEO)
70V
Collector-emitter Voltage-Max
70V
Fall Time
8us
Height
5mm
Lead Free
Lead Free
Length
5mm
Lens Style
Domed
Max Breakdown Voltage
70V
Max Collector Current
100mA
Max Operating Temperature
85°C
Min Operating Temperature
-40°C
Max Power Dissipation
150mW
Mount
Through Hole
Number of Elements
1
Operating Supply Voltage
5V
Orientation
Side View
Package Quantity
2000
Packaging
Bulk
Polarity
NPN
Power Consumption
150mW
Power Dissipation
150mW
Radiation Hardening
No
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Viewing Angle
74°
Wavelength
920nm
Width
2.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay TEKT5400S Datasheet
Download the complete datasheet for Vishay TEKT5400S to view detailed technical specifications.
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