NPN phototransistor for optical sensing applications. Features a 70V collector-emitter breakdown voltage and 50mA maximum collector current. Operates with a 950nm wavelength and a 15° viewing angle. Packaged in a 2-pin SMD with a domed lens, suitable for surface mounting. Includes 100mW power dissipation and a fall time of 2.3µs. RoHS compliant and lead-free.
PackageSMD/SMT
MountingSurface Mount
PolarityNPN
Power100mW
Quick Jump:
Technical Specifications
Vishay TEMT1000 technical specifications.
General
Package/Case
SMD/SMT
Collector Emitter Breakdown Voltage
70V
Collector Emitter Saturation Voltage
300mV
Collector Emitter Voltage (VCEO)
70V
Collector-emitter Voltage-Max
70V
Fall Time
2.3us
Height
2.7mm
Lead Free
Lead Free
Length
2.5mm
Lens Style
Domed
Max Breakdown Voltage
70V
Max Collector Current
50mA
Max Operating Temperature
85°C
Min Operating Temperature
-40°C
Max Power Dissipation
100mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Orientation
Top View
Package Quantity
1000
Packaging
Tape and Reel
Polarity
NPN
Power Consumption
100mW
Power Dissipation
100mW
Radiation Hardening
No
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Viewing Angle
15°
Wavelength
880nm
Width
2mm
Compliance
RoHS
Compliant
Datasheet
Vishay TEMT1000 Datasheet
Download the complete datasheet for Vishay TEMT1000 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
