NPN Silicon Phototransistor, 880nm wavelength, 70V Collector-Emitter Breakdown Voltage, 50mA Max Collector Current, and 100mW Max Power Dissipation. Features a 2-pin SMD/SMT package with a domed lens, suitable for surface mount applications. Operating temperature range from -40°C to 85°C, with a 2.3µs fall time. Packaged in tape and reel for efficient assembly.
PackageSMD/SMT
MountingSurface Mount, PCB
PolarityNPN
Power100mW
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Technical Specifications
Vishay TEMT1020 technical specifications.
General
Package/Case
SMD/SMT
Collector Emitter Breakdown Voltage
70V
Collector Emitter Saturation Voltage
300mV
Collector Emitter Voltage (VCEO)
70V
Collector-emitter Voltage-Max
70V
Fall Time
2.3us
Height
2.7mm
Lead Free
Lead Free
Length
2.5mm
Lens Style
Domed
Max Breakdown Voltage
70V
Max Collector Current
50mA
Max Operating Temperature
85°C
Min Operating Temperature
-40°C
Max Power Dissipation
100mW
Mount
Surface Mount, PCB
Number of Channels
1
Number of Elements
1
Operating Supply Current
7mA
Orientation
Top View
Output Power
100mW
Package Quantity
1000
Packaging
Tape and Reel
Polarity
NPN
Power Consumption
100mW
Power Dissipation
100mW
Radiation Hardening
No
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Viewing Angle
15°
Wavelength
880nm
Width
2mm
Compliance
RoHS
Compliant
Datasheet
Vishay TEMT1020 Datasheet
Download the complete datasheet for Vishay TEMT1020 to view detailed technical specifications.
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