N-channel JFET for general-purpose small signal applications. Features a 20V drain-source breakdown voltage and 730mA continuous drain current. Offers a low drain-source on-resistance of 400mΩ (max) and a threshold voltage of 600mV. Packaged in a SOT-23-3 surface-mount case, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 350mW.
PackageSOT-23-3
Voltage20V
Current12A
MountingSurface Mount
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Technical Specifications
Vishay TN0200K-T1-E3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
730mA
Current
12A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
200mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
400mR
Fall Time
20ns
Gate to Source Voltage (Vgs)
8V
Height
0.04inch
Lead Free
Lead Free
Length
0.119inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
350mW
Mount
Surface Mount
Nominal Vgs
600mV
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
350mW
Rds On Max
400mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Termination
SMD/SMT
Threshold Voltage
600mV
Turn-Off Delay Time
55ns
Turn-On Delay Time
17ns
Voltage
20V
Width
3.05mm
Compliance
RoHS
Compliant
Datasheet
Vishay TN0200K-T1-E3 Datasheet
Download the complete datasheet for Vishay TN0200K-T1-E3 to view detailed technical specifications.
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