Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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| Continuous Drain Current (ID) | 390mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 3R |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 500 |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| RoHS Compliant | No |
| RoHS | Not Compliant |
