P-channel, small-signal JFET transistor for general-purpose applications. Features a continuous drain current of 580mA and a drain-to-source breakdown voltage of -20V. Offers a maximum power dissipation of 350mW and a low on-resistance of 650mΩ. Packaged in a compact SOT-23-3 surface-mount case, this RoHS-compliant component operates from -55°C to 150°C.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
Power350mW
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Technical Specifications
Vishay TP0101K-T1-E3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
580mA
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
420mR
Drain to Source Voltage (Vdss)
-20V
Drain-source On Resistance-Max
650mR
Fall Time
30ns
Gate to Source Voltage (Vgs)
8V
Height
1.02mm
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
350mW
Mount
Surface Mount
Nominal Vgs
-700mV
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
350mW
Radiation Hardening
No
Rds On Max
650mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
700mV
Turn-Off Delay Time
55ns
Turn-On Delay Time
25ns
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay TP0101K-T1-E3 Datasheet
Download the complete datasheet for Vishay TP0101K-T1-E3 to view detailed technical specifications.
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