P-channel JFET transistor for general-purpose small signal applications. Features a continuous drain current of -580mA and a drain-to-source voltage of -20V. Offers a maximum power dissipation of 350mW and a low drain-source on-resistance of 650mΩ. Packaged in a SOT-23-3 surface-mount case, this component is RoHS compliant and operates within a temperature range of -55°C to 150°C.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay TP0101K-T1-GE3 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | -580mA |
| Drain to Source Resistance | 42mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 650mR |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 8V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Nominal Vgs | -700mV |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 650mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -700mV |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 25ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay TP0101K-T1-GE3 Datasheet
Download the complete datasheet for Vishay TP0101K-T1-GE3 to view detailed technical specifications.
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