P-channel JFET transistor for general-purpose small signal applications. Features a continuous drain current of -580mA and a drain-to-source voltage of -20V. Offers a maximum power dissipation of 350mW and a low drain-source on-resistance of 650mΩ. Packaged in a SOT-23-3 surface-mount case, this component is RoHS compliant and operates within a temperature range of -55°C to 150°C.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay TP0101K-T1-GE3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
-580mA
Drain to Source Resistance
42mR
Drain to Source Voltage (Vdss)
-20V
Drain-source On Resistance-Max
650mR
Fall Time
38ns
Gate to Source Voltage (Vgs)
8V
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
350mW
Mount
Surface Mount
Nominal Vgs
-700mV
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
650mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-700mV
Turn-Off Delay Time
55ns
Turn-On Delay Time
25ns
Compliance
RoHS
Compliant
Datasheet
Vishay TP0101K-T1-GE3 Datasheet
Download the complete datasheet for Vishay TP0101K-T1-GE3 to view detailed technical specifications.
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