P-channel JFET for general-purpose small signal applications. Features a -60V Drain to Source Voltage (Vdss) and -185mA Continuous Drain Current (ID). Offers a low Drain to Source Resistance of 10 Ohms and a maximum power dissipation of 350mW. Packaged in a compact SOT-23-3 surface-mount case, this device operates from -55°C to 150°C and is RoHS compliant.
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| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | -185mA |
| Drain to Source Resistance | 10R |
| Drain to Source Voltage (Vdss) | -60V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.02mm |
| Input Capacitance | 155pF |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Nominal Vgs | -1V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| Rds On Max | 190mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -2V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.050717oz |
| Width | 1.4mm |
| RoHS | Compliant |
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