P-channel JFET for general-purpose small signal applications. Features a -60V Drain to Source Voltage (Vdss) and -185mA Continuous Drain Current (ID). Offers a low Drain to Source Resistance of 10 Ohms and a maximum power dissipation of 350mW. Packaged in a compact SOT-23-3 surface-mount case, this device operates from -55°C to 150°C and is RoHS compliant.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
Power350mW
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Technical Specifications
Vishay TP0610K-T1-GE3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
-185mA
Drain to Source Resistance
10R
Drain to Source Voltage (Vdss)
-60V
Gate to Source Voltage (Vgs)
20V
Height
1.02mm
Input Capacitance
155pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
350mW
Mount
Surface Mount
Nominal Vgs
-1V
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
350mW
Radiation Hardening
No
Rds On Max
190mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-2V
Turn-Off Delay Time
35ns
Turn-On Delay Time
20ns
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay TP0610K-T1-GE3 Datasheet
Download the complete datasheet for Vishay TP0610K-T1-GE3 to view detailed technical specifications.
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