NPN silicon phototransistor for optical sensing applications. Features a 70V collector-emitter voltage, 50mA max collector current, and 100mW power dissipation. Emitting infrared light at 830nm with a 120° viewing angle. Packaged in a 2-pin PLCC surface-mount case, this component operates from -40°C to 100°C and is supplied on tape and reel.
PackagePLCC
MountingSurface Mount
PolarityNPN
Power100mW
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Technical Specifications
Vishay VEMT3700-GS08 technical specifications.
General
Package/Case
PLCC
Collector Emitter Voltage (VCEO)
70V
Collector-emitter Voltage-Max
70V
Fall Time
6000ns
Height
1.65mm
Length
3mm
Lens Style
Flat
Max Collector Current
50mA
Max Operating Temperature
100°C
Min Operating Temperature
-40°C
Max Power Dissipation
100mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Orientation
Top View
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Consumption
100mW
Power Dissipation
100mW
Radiation Hardening
No
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Viewing Angle
120°
Wavelength
830nm
Width
2.8mm
Compliance
RoHS
Compliant
Datasheet
Vishay VEMT3700-GS08 Datasheet
Download the complete datasheet for Vishay VEMT3700-GS08 to view detailed technical specifications.
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