Small Signal Field-Effect Transistor, 0.19A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, TO-92, 3 PIN
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Vishay VN2010L technical specifications.
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 190mA |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 10R |
| Drain to Source Voltage (Vdss) | 200V |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.7mm |
| Length | 4.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Polarity | N-CHANNEL |
| Power Dissipation | 800mW |
| RoHS Compliant | No |
| Weight | 0.050717oz |
| Width | 3.68mm |
| RoHS | Not Compliant |
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