Vishay
VN2010L
Small Signal Field-Effect Transistor, 0.19A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, TO-92, 3 PIN
PackageSOT-23-3
PolarityN-CHANNEL
Power800mW
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Technical Specifications
Vishay VN2010L technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
190mA
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
10R
Drain to Source Voltage (Vdss)
200V
Gate to Source Voltage (Vgs)
30V
Height
4.7mm
Length
4.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
800mW
Number of Channels
1
Package Quantity
500
Polarity
N-CHANNEL
Power Dissipation
800mW
RoHS Compliant
No
Weight
0.050717oz
Width
3.68mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay VN2010L Datasheet
Download the complete datasheet for Vishay VN2010L to view detailed technical specifications.
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