Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Vishay VN88AFD technical specifications.
| Continuous Drain Current (ID) | 1.29A |
| Drain to Source Resistance | 4R |
| Drain to Source Voltage (Vdss) | 80V |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 15W |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Polarity | N-CHANNEL |
| RoHS Compliant | No |
| RoHS | Not Compliant |
No datasheet is available for this part.
