Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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Vishay VQ1000P technical specifications.
| Package/Case | DIP |
| Continuous Drain Current (ID) | 225mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 5.5R |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.3W |
| Radiation Hardening | No |
| RoHS Compliant | No |
| RoHS | Not CompliantNo |
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