PackagePDIP
MountingThrough Hole
PolarityN-CHANNEL
Power1.3W
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Technical Specifications
Vishay VQ1000P-E3 technical specifications.
General
| Package/Case | PDIP |
| Continuous Drain Current (ID) | 225mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 5.5R |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Nominal Vgs | 2.1V |
| Package Quantity | 25 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.3W |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
Compliance
| RoHS | Compliant |
Datasheet
Vishay VQ1000P-E3 Datasheet
Download the complete datasheet for Vishay VQ1000P-E3 to view detailed technical specifications.
No datasheet is available for this part.