Vishay
VQ1004P-2
Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MountingThrough Hole
Quick Jump:
Technical Specifications
Vishay VQ1004P-2 technical specifications.
General
| Continuous Drain Current (ID) | 460mA |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay VQ1004P-2 Datasheet
Download the complete datasheet for Vishay VQ1004P-2 to view detailed technical specifications.
No datasheet is available for this part.