PackagePDIP
MountingThrough Hole
PolarityN-CHANNEL
Power2W
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Technical Specifications
Vishay VQ1006P technical specifications.
General
Package/Case
PDIP
Continuous Drain Current (ID)
400mA
Drain to Source Breakdown Voltage
90V
Drain to Source Resistance
4R
Drain to Source Voltage (Vdss)
90V
FET Type
4 N-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
60pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Through Hole
Number of Channels
4
Package Quantity
25
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
4.5R
RoHS Compliant
No
Weight
0.042329oz
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay VQ1006P Datasheet
Download the complete datasheet for Vishay VQ1006P to view detailed technical specifications.
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