The VQ1006P-2 is a 4 N-Channel MOSFET with a maximum drain to source voltage of 90V and a maximum gate to source voltage of 20V. It can handle a continuous drain current of 400mA and has a maximum power dissipation of 2W. The device is packaged in a 4-pin PDIP and is suitable for use in through hole mount applications. The operating temperature range is from -55°C to 150°C.
PackagePDIP
MountingThrough Hole
Power1.3W
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Technical Specifications
Vishay VQ1006P-2 technical specifications.
General
| Package/Case | PDIP |
| Continuous Drain Current (ID) | 400mA |
| Drain to Source Voltage (Vdss) | 90V |
| FET Type | 4 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 60pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Number of Elements | 4 |
| Packaging | Bulk |
| Power Dissipation | 1.3W |
| Radiation Hardening | No |
| Rds On Max | 4.5R |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay VQ1006P-2 Datasheet
Download the complete datasheet for Vishay VQ1006P-2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.