The VQ1006P-2 is a 4 N-Channel MOSFET with a maximum drain to source voltage of 90V and a maximum gate to source voltage of 20V. It can handle a continuous drain current of 400mA and has a maximum power dissipation of 2W. The device is packaged in a 4-pin PDIP and is suitable for use in through hole mount applications. The operating temperature range is from -55°C to 150°C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay VQ1006P-2 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | PDIP |
| Continuous Drain Current (ID) | 400mA |
| Drain to Source Voltage (Vdss) | 90V |
| FET Type | 4 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 60pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Number of Elements | 4 |
| Packaging | Bulk |
| Power Dissipation | 1.3W |
| Radiation Hardening | No |
| Rds On Max | 4.5R |
| RoHS Compliant | No |
| RoHS | Not CompliantNo |
Download the complete datasheet for Vishay VQ1006P-2 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
