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Technical Specifications
Vishay VQ1006P-E3 technical specifications.
General
Package/Case
PDIP
Continuous Drain Current (ID)
400mA
Drain to Source Breakdown Voltage
90V
Drain to Source Resistance
4.5R
Drain to Source Voltage (Vdss)
90V
FET Type
4 N-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
60pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Through Hole
Packaging
Bulk
Radiation Hardening
No
Rds On Max
4.5R
Compliance
RoHS
Compliant
Datasheet
Vishay VQ1006P-E3 Datasheet
Download the complete datasheet for Vishay VQ1006P-E3 to view detailed technical specifications.
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