The VQ1006P-E3 is a 4 N-Channel MOSFET from Vishay with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 90V and a continuous drain current of 400mA. The device has a maximum power dissipation of 2W and a gate to source voltage of 20V. It is packaged in a PDIP package and is suitable for through hole mounting.
PackagePDIP
MountingThrough Hole
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Technical Specifications
Vishay VQ1006P-E3 technical specifications.
General
| Package/Case | PDIP |
| Continuous Drain Current (ID) | 400mA |
| Drain to Source Breakdown Voltage | 90V |
| Drain to Source Resistance | 4.5R |
| Drain to Source Voltage (Vdss) | 90V |
| FET Type | 4 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 60pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Packaging | Bulk |
| Radiation Hardening | No |
| Rds On Max | 4.5R |
Compliance
| RoHS | Compliant |
Datasheet
Vishay VQ1006P-E3 Datasheet
Download the complete datasheet for Vishay VQ1006P-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.