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Technical Specifications
Vishay VQ2001P technical specifications.
General
Package/Case
DIP
Continuous Drain Current (ID)
600mA
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
2R
Drain to Source Voltage (Vdss)
30V
FET Type
4 P-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
150pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Through Hole
Number of Channels
4
Package Quantity
25
Packaging
Rail/Tube
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
2R
RoHS Compliant
No
Weight
0.042329oz
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay VQ2001P Datasheet
Download the complete datasheet for Vishay VQ2001P to view detailed technical specifications.
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