The VS-10ETF02S-M3 is a silicon rectifier diode with a maximum operating temperature of 150 degrees Celsius and a minimum operating temperature of -40 degrees Celsius. It has a single terminal position and is packaged in a TO-263AB package type, specifically a D2PAK-3/2 variant. The diode element material is silicon and the diode type is a rectifier diode. The device is rated for a maximum reverse voltage of 200 volts.
Checking distributor stock and pricing after the page loads.
Vishay VS-10ETF02S-M3 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -40 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 200 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.80 |
| REACH | Compliant |
| Military Spec | False |
No datasheet is available for this part.
