The VS-CPV362M4UPBF is a high-power insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 7.2A. It is packaged in a SIP case and is designed for through-hole mounting. The device is RoHS compliant and has an operating temperature range of -40°C to 150°C. It can dissipate a maximum power of 23W and has a low input capacitance of 530pF.
PackageSIP
MountingThrough Hole
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Technical Specifications
Vishay VS-CPV362M4UPBF technical specifications.
General
| Package/Case | SIP |
| Collector Emitter Breakdown Voltage | 600V |
| Collector-emitter Voltage-Max | 2.2V |
| Input | Standard |
| Input Capacitance | 530pF |
| Max Collector Current | 7.2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 23W |
| Mount | Through Hole |
| NTC Thermistor | No |
| Packaging | Bulk |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Vishay VS-CPV362M4UPBF Datasheet
Download the complete datasheet for Vishay VS-CPV362M4UPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.