The VS-GB100DA60UP is a high-power insulated gate bipolar transistor from Vishay with a collector-emitter breakdown voltage of 600V and a maximum collector current of 125A. It is packaged in a SOT-227 case and is designed for chassis mount applications. The transistor can handle a maximum power dissipation of 447W and operates within a temperature range of -40°C to 150°C. The device is RoHS compliant and is suitable for use in a variety of high-power applications.
PackageSOT-227
MountingChassis Mount, Screw
PolarityNPN
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Technical Specifications
Vishay VS-GB100DA60UP technical specifications.
General
| Package/Case | SOT-227 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.4V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.8V |
| Input | Standard |
| Max Collector Current | 125A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 447W |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | No |
| Packaging | Bulk |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay VS-GB100DA60UP Datasheet
Download the complete datasheet for Vishay VS-GB100DA60UP to view detailed technical specifications.
No datasheet is available for this part.