Vishay
VS-GB75SA120UP
VISHAY VS-GB75SA120UP IGBT Array & Module Transistor, NPN, 131 A, 3.3 V, 658 W, 1.2 kV, SOT-227
PackageSOT-227
MountingChassis Mount, Screw
PolarityNPN
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Technical Specifications
Vishay VS-GB75SA120UP technical specifications.
General
| Package/Case | SOT-227 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 3.3V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 3.8V |
| Input | Standard |
| Max Collector Current | 250uA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 658W |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | No |
| Packaging | Bulk |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay VS-GB75SA120UP Datasheet
Download the complete datasheet for Vishay VS-GB75SA120UP to view detailed technical specifications.
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