This unidirectional silicon transient voltage suppressor diode features a breakdown voltage of 38.27V and a maximum non-repetitive peak reverse power dissipation of 400W. It operates within a temperature range of -55°C to 175°C and is packaged in a 2-pin SMF package. The diode element material is silicon and it is a single element device.
Vishay VTVS33GSMF-HM3-18 technical specifications.
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-219AB |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 33.3 |
| Breakdown Voltage-Min | 38.27 |
| Non-rep Peak Rev Power Dis-Max | 400 |
| Breakdown Voltage-Max | 39.84 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | not_compliant |
| Military Spec | False |
No datasheet is available for this part.
