The C3M0065100J is a 1000V, 65mΩ Silicon Carbide (SiC) Power MOSFET utilizing Wolfspeed’s 3rd generation (C3M) technology. It is designed for high-frequency power electronics applications including electric vehicle charging, solar inverters, and switch-mode power supplies. This device offers high blocking voltage with low on-resistance and high-speed switching with low capacitances, providing superior efficiency and power density compared to silicon-based solutions.
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Wolfspeed, Inc. C3M0065100J technical specifications.
| Drain-Source Voltage (Vds) | 1000V |
| Continuous Drain Current (Id) @ 25°C | 35A |
| Continuous Drain Current (Id) @ 100°C | 22A |
| Drain-Source On-State Resistance (Rds on) Typ. | 65mΩ |
| Total Gate Charge (Qg) | 51nC |
| Input Capacitance (Ciss) | 1140pF |
| Operating Junction Temperature | -40 to +175°C |
| Power Dissipation (Pd) | 150W |
| Gate-Source Voltage (Vgs) Operating | -4 to +15V |
| RoHS | Compliant |
| Halogen-free | Yes |
