WOLFSPEED, INC.
CG2H40010F
CG2H40010F 10W, DC-8.0 GHz, GaN on SiC High Electron Mobility Transistor (HEMT)
The CG2H40010F is a high-performance Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) built on a Silicon Carbide (SiC) substrate. It is designed for a variety of RF and microwave applications from DC up to 8.0 GHz. Operating from a 28V supply rail, it provides high efficiency, high gain, and wide bandwidth, making it an ideal choice for linear and compressed amplifier circuits. The device is packaged in a 440166 screw-down flange package, offering robust thermal management for high-power density applications.
Voltage28V
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Technical Specifications
WOLFSPEED, INC. CG2H40010F technical specifications.
General
| Frequency Range | DC - 8.0GHz |
| Output Power (Psat) | 17W |
| Power Output (Continuous) | 10W |
| Operating Voltage | 28V |
| Small Signal Gain @ 2.0 GHz | 18dB |
| Small Signal Gain @ 4.0 GHz | 16dB |
| Drain Efficiency @ PSAT | 70% |
| Drain-Source Breakdown Voltage (Vdss) | 120V |
| Gate-Source Voltage (Vgs) | -10 to +2V |
| Continuous Drain Current (Id) | 1.5A |
| Operating Junction Temperature | 150°C |
| Storage Temperature Range | -65 to 150°C |
Compliance
| RoHS | Compliant (RoHS 3) |
| REACH | Compliant/Unaffected |
| ECCN | EAR99 |
Datasheet
WOLFSPEED, INC. CG2H40010F Datasheet
Download the complete datasheet for WOLFSPEED, INC. CG2H40010F to view detailed technical specifications.
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