The CMPA2735075F1 is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) based Monolithic Microwave Integrated Circuit (MMIC) designed for S-Band pulsed radar applications. Operating within the 2.7 to 3.5 GHz frequency range, it delivers a typical saturated output power of 75 watts and a small signal gain of 29 dB. This two-stage reactively matched amplifier design offers high power density, wide bandwidth, and high thermal conductivity compared to traditional Silicon or Gallium Arsenide technologies. It is housed in a screw-down flange package to ensure efficient heat dissipation and reliable mounting in high-power microwave systems.
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Technical Specifications
WOLFSPEED, INC. CMPA2735075F1 technical specifications.
General
| Frequency Range (Min) | 2.7GHz |
| Frequency Range (Max) | 3.5GHz |
| Saturated Output Power (Psat) | 75W |
| Small Signal Gain | 29dB |
| Operating Voltage (VDS) | 28V |
| Power Added Efficiency (PAE) | 55% |
| Quiescent Current (IDQ) | 800mA |
| Operating Temperature (Min) | -65°C |
| Junction Temperature (Max) | 225°C |
| Dimensions | 12.83 x 12.83 x 4.12mm |
Compliance
| RoHS | Compliant |
| REACH | Compliant |
Datasheet
WOLFSPEED, INC. CMPA2735075F1 Datasheet
Download the complete datasheet for WOLFSPEED, INC. CMPA2735075F1 to view detailed technical specifications.
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