The C3M0015065K is an N-channel enhancement mode Silicon Carbide (SiC) MOSFET based on C3M MOSFET technology. It features low on-state resistance over temperature, ultra-low parasitic capacitances, and a fast intrinsic diode with low reverse recovery. The component includes a Kelvin source pin to reduce switching losses and minimize gate ringing. It is designed for high-frequency operation and is industrial qualified for high-temperature environments up to 175°C.
Wolfspeed C3M0015065K technical specifications.
| Drain-Source Voltage (Vds) | 650V |
| Drain-Source On-State Resistance (Rds(on)) at 25°C | 15mΩ |
| Continuous Drain Current (Id) at 25°C | 120A |
| Maximum Junction Temperature (Tjmax) | 175°C |
| Gate-Source Voltage (Vgs) | -8 to +19V |
| Total Gate Charge (Qg) | 188nC |
| Power Dissipation (Pd) | 416W |
| RoHS | Compliant |
| Halogen Free | Yes |
| ECCN | EAR99 |
No datasheet is available for this part.
