The C3M0016120K is an N-Channel enhancement mode Silicon Carbide (SiC) power MOSFET utilizing 3rd generation C3M planar MOSFET technology. It features high blocking voltage with low on-resistance, high-speed switching with low capacitances, and a fast intrinsic diode with low reverse recovery (Qrr). The device is housed in a TO-247-4 package which includes a separate Kelvin driver source pin to reduce switching losses and gate ringing.
Wolfspeed C3M0016120K technical specifications.
| Drain to Source Voltage (Vdss) | 1200V |
| RDS(on) Typical | 16mΩ |
| Continuous Drain Current (Id) @ 25°C | 115A |
| Maximum Operating Junction Temperature (Tjmax) | 175°C |
| Total Gate Charge (Qg) | 188nC |
| Power Dissipation (Pd) | 556W |
| Gate to Source Voltage (Vgs) | -4 to +19V |
| Creepage Distance | 8mm |
| RoHS | Compliant |
| Halogen Free | Yes |
| REACH | Compliant |
| Qualification | Industrial |
No datasheet is available for this part.
