The C3M0030090K is a Silicon Carbide (SiC) Power MOSFET based on C3M planar MOSFET technology. It features high blocking voltage with low on-resistance, high-speed switching with low capacitances, and a fast intrinsic diode with low reverse recovery. The TO-247-4 package includes a separate driver source pin to reduce switching losses and minimize gate ringing. It is designed for high-efficiency power conversion in solar inverters, EV battery chargers, and high-voltage DC/DC converters.
Sign in to ask questions about the Wolfspeed C3M0030090K datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Wolfspeed C3M0030090K technical specifications.
| Drain-Source Voltage (Vds) | 900V |
| Drain-Source On-Resistance (Rds On) at 25°C | 30mΩ |
| Continuous Drain Current (Id) at 25°C | 63A |
| Maximum Junction Temperature (Tjmax) | 150°C |
| Power Dissipation (Pd) | 240W |
| Total Gate Charge (Qg) | 73nC |
| RoHS | Compliant |
| Halogen-free | Yes |
Download the complete datasheet for Wolfspeed C3M0030090K to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
